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s mhop microelectronics c orp. a sdu/d05n04 symbol v ds v gs i dm w a p d c -55 to 175 i d units parameter 400 4 12 v v 30 t c =25 c gate-source voltage drain-source voltage product summary v dss i d r ds(on) ( ) typ 400v 4a 2.1 @ vgs=10v absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b maximum power dissipation operating junction and storage temperature range t j , t stg www.samhop.com.tw dec,24,2013 1 details are subject to change without notice. t c =25 c a ver 1.2 t c =70 c a 3.3 t c =70 c w e as mj single pulse avalanche energy d 2.5 green product n-channel enhancement mode field effect transistor features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. 68 48 thermal characteristics 50 c/w thermal resistance, junction-to-ambient r ja 2.2 c/w thermal resistance, junction-to-case r jc a a g s sdd series to-251s(i-pa) g s d g s d sdd series to-251l(i-pa) sdu series to-252(d-pa) d ordering information ordering code package marking code delivery mode rohs status sdd05n04hs to-251s to-251l sdd05n04 sdd05n04 tube tube halogen free sdu05n04hz to-252 sdu05n04 reel halogen free sdd05n04hl halogen free
4 symbol min typ max units bv dss 400 v 1 i gss 100 na v gs(th) 2 v g fs 1.6 s v sd c iss 320 pf c oss 44 pf c rss 7.9 pf q g 16 nc 12.5 nc q gs 19 nc q gd 5 t d(on) ns t r 1.4 ns t d(off) 2.3 ns t f ns gate-drain charge v ds =25v,v gs =0v switching characteristics gate-source charge v dd =200v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =100v,i d =1a,v gs =10v fall time turn-on delay time ohm v gs =10v , i d =2a v ds =20v , i d =2a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =320v , v gs =0v v gs = 30v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 4 2.6 c f=1.0mhz c v ds =100v,i d =1a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =1a 1.4 v notes sdu/d05n04 www.samhop.com.tw dec,24,2013 2 5.7 _ _ a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=5mh,v dd = 50v.(see figure13) ver 1.2 2.1 _ 0.79 3
sdu/d05n04 www.samhop.com.tw dec,24,2013 3 figure 1. output characteristics v ds , drain-to-source voltage (v) i d , drain current(a) figure 2. transfer characteristics v gs , gate-to-source voltage (v) 2.5 2.0 1.5 0.5 0 0 1.2 2.4 3.6 4.8 6 7.2 tj=125 c -55 c 1.0 25 c i d , drain current(a) i d , drain current (a) 6 5 4 3 2 1 0 1234 5 0.1 0 25 50 75 tj( c) 150 100 125 tj, junction temperature ( c) v gs =10v i d =2a vth, normalized gate-source threshold voltage tj, junction temperature ( c) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 figure 5. gate threshold variation with temperature v ds =v gs i d =250ua figure 6. breakdown voltage variation with temperature bv dss , normalized drain-source breakdown voltage tj, junction temperature ( c) -50 -25 0 25 50 75 100 125 150 1.3 1.2 1.1 1.0 0.9 0.8 0.7 i d =250ua r ds(on) , on-resistance normalized drain current and temperature figure 4. on-resistance variation with and gate voltage figure 3. on-resistance vs. drain current ver 1.2 6 4 3 2 1 0 0 5 10 15 20 25 30 5 7 v gs = 10v r ds(on) ( ) v gs = 7v v gs = 6v v gs = 10v v gs = 8v 1.0 0.8 1.2 1.4 1.6 1.8 2.0
sdu/d05n04 www.samhop.com.tw dec,24,2013 4 9.0 7.5 6.0 4.5 3.0 1.5 0 2 468 10 0 i d =2a 125 c 75 c 25 c gate-source voltage figure 7. on-resistance vs. v gs , gate-sorce voltage(v) is, source-drain current (a) figure 8. body diode forward voltage variation with source current v sd , body diode forward voltage(v) figure 9. capacitance c, capacitance (pf) 480 400 320 240 160 80 0 010 20 30 v ds , drain-to source voltage(v) v gs , gate to source voltage (v) 10 8 6 4 2 0 02468 figure 10. gate charge qg, total gate charge(nc) figure 12. maximum safe i d , drain current (a) operating area ver 1.2 r ds(on) ( ) 20.0 10.0 1.0 0 0.4 0.8 1.2 1.6 2.0 5.0 125 c 25 c 75 c 40 50 crss coss ciss v ds =100v i d =1a 10 0.1 1 10 100 1 0.1 0.01 1000 v gs =10v single pulse t a =25 c r d s (on) limit 10 d c 10 0u s 1m s 10 m s switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 110 100 1 10 100 300 vds=200v,id=1a vgs=10v td(on) tr td(off ) tf v ds , drain-source voltage (v)
t p v (br )dss i as r g i as 0.01 t p d.u.t l v ds + - v dd dr ive r a 15v 20v f igure 13a. figure 13b. u nc l am p ed s in d u ct i ve t e t ci r c u i t o fr m w ave s u nc l am p e d in d u ct i ve sdu/d05n04 ver 1.2 www.samhop.com.tw dec,24,2013 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datas heet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse
sdu/d05n04 ver 1.2 www.samhop.com.tw dec,24,2013 6 to-252 l3 b2 b l2 l a1 l1 a max min c c2 d d1 e h e1 millimeters symbols e b3 e b3 h l3 d l4 b2 b e 1 2 3 a c2 c e1 d1 l1 a1 l2 detail "a" detail "a" 2.200 2.380 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.210 2.286 bsc 6.400 6.731 4.318 9.400 10.400 l4 1.400 1.770 2.743 ref l 0.508 bsc 0.890 1.270 0.640 1.010 0 10 4.900 5.380
www.samhop.com.tw 7 package outline dimensions to-251s b3 d e d1 12 3 l4 e l5 h b4 b2 b e1 a c2 l c symbol millimeters min max e 6.350 6.731 l 3.700 4.400 l4 0.698 ref l5 0.972 1.226 5.970 d6.223 h 9.670 11.450 b 0.630 0.850 b2 0.760 1.140 4.950 b3 5.460 b4 0.450 0.550 e 2.286 bsc a 2.180 2.390 c 0.400 0.610 0.400 0.610 c2 d1 5.100 e1 4.318 ver 1.2 dec,24,2013 sdu/d05n04
ver 1.2 www.samhop.com.tw dec,24,2013 8 package outline dimensions sdu/d05n04 to-251l a1 d a e l1 b1 b2 e c e1 c1 symbol millimeters min nom a 6.40 6.50 a1 5.30 5.40 a2 4.30 b 1.35 1.50 l1 l d 5.40 5.55 c0.55 0.60 c1 e1 1.72 e 2.20 2.30 0.60 0.75 b1 b 4.40 1.77 l b2 1.55 ref 7.40 7.70 0.70 0.85 a2 b4 b3 b3 b4 e max 6.60 5.50 4.50 1.65 8.00 5.70 0.65 0.49 0.54 0.59 1.82 2.40 0.80 0.90 2.30
sdu/d05n04 ver 1.2 www.samhop.com.tw dec,24,2013 9 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @* a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 - 0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 - 0 2.2 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5 " a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h
www.samhop.com.tw 10 top marking definition to-252 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) sdu05n04 smc internal code no. (a,b,c...z) ver 1.2 sdu/d05n04 dec,24,2013
www.samhop.com.tw 11 top marking definition to-251s ver 1.2 sdu/d05n04 dec,24,2013 to-251l xxxxxx product no. samhop logo sdd05n04 wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) smc internal code no. (a,b,c...z) xxxxxx sdd05n04 production year (2009 = 9, 2010 = a.....) production month (1,2 ~ 9, a,b,c) production date (1,2 ~ 9, a,b.....) wafer lot no. smc internal code no. (a,b,c...z)

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